 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Optocoupler, Photodarlington Output (Single, Dual, Quad Channel) Single Channel Features * * * * * * * * 125 mA Load Current Rating Fast Rise Time, 10 s Fast Fall Time, 35 s Single, Dual and Quad Channel Solid State Reliability Standard DIP Packages Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A C NC 1 2 3 6B 5C 4E Dual Channel A1 C2 C3 A4 8E 7C 6C 5E Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 * BSI IEC60950 IEC60065 * FIMKO Quad Channel A1 C2 C3 A4 A C C 5 6 7 16 E 15 C 14 C 13 E 12 E 11 C 10 C 9E A8 Description The IL30/ IL31/ IL55 single, ILD30/ ILD31/ ILD55 dual, and ILQ30/ ILQ31/ ILQ55 quad are optically coupled isolators with Gallium Arsenide infrared emitters and silicon photodarlington sensors. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits, with no crosstalk between channels. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. The IL30/ IL31/ IL55 are equivalent to MCA230/ MCA231/ MCA255. The ILD30/ ILD31/ ILD55 are designed to reduce board space requirements in high density applications. i179011 e3 Pb Pb-free Document Number 83621 Rev. 1.5, 26-Oct-04 www.vishay.com 1 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Order Information Part IL30 IL31 IL55 ILD30 ILD31 ILD55 ILQ30 ILQ31 ILQ55 IL55-X009 ILD30-X009 ILD31-X007 ILD31-X009 ILD55-X007 ILD55-X009 ILQ30-X009 ILQ55-X007 ILQ55-X009 Remarks CTR > 100 %, Single Channel DIP-6 CTR > 200 %, Single Channel DIP-6 CTR > 100 %, Single Channel DIP-6 CTR > 100 %, Dual Channel DIP-8 CTR > 200 %, Dual Channel DIP-8 CTR > 100 %, Dual Channel DIP-8 CTR > 100 %, Quad Channel DIP-16 CTR > 200 %, Quad Channel DIP-16 CTR > 100 %, Quad Channel DIP-16 CTR > 100 %, Single Channel SMD-6 (option 9) CTR > 100 %, Dual Channel SMD-8 (option 9) CTR > 200 %, Dual Channel SMD-8 (option 7) CTR > 200 %, Dual Channel SMD-8 (option 9) CTR > 100 %, Dual Channel SMD-8 (option 7) CTR > 100 %, Dual Channel SMD-8 (option 9) CTR > 100 %, Quad Channel SMD-16 (option 9) CTR > 100 %, Quad Channel SMD-16 (option 7) CTR > 100 %, Quad Channel SMD-16 (option 9) For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input (each channel) Parameter Peak reverse voltage Forward continuous current Power dissipation Derate linearly from 25 C Test condition Symbol VRM IF Pdiss Value 3.0 60 100 1.33 Unit V mA mW mW/C Output Parameter Collector-emitter breakdown voltage Test condition Part IL30 ILD30 ILQ30 IL55 ILD55 ILD55 Symbol BVCEO BVCEO BVCEO BVCEO BVCEO BVCEO Value 30 30 30 55 55 55 Unit V V V V V V www.vishay.com 2 Document Number 83621 Rev. 1.5, 26-Oct-04 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Parameter Collector (load) current Power dissipation Derate linearly from 25 C Test condition Part Symbol IC Pdiss Value 125 150 2.0 Unit mA mW mW/C Coupler Parameter Total package power dissipation Test condition Part IL30 IL31 IL55 ILD30 ILD31 ILD55 ILQ30 ILQ31 ILQ55 Derate linearly from 25 C IL30 IL31 IL55 ILD30 ILD31 ILD55 ILQ30 ILQ31 ILQ55 Isolation test voltage Creepage Clearance Comparative tracking index Storage temperature Operating temperature Lead soldering time at 260 C Tstg Tamb VISO Symbol Ptot Ptot Ptot Ptot Ptot Ptot Ptot Ptot Ptot Value 250 250 250 400 400 400 500 500 500 3.3 3.3 3.3 5.33 5.33 5.33 6.67 6.67 6.67 5300 7.0 7.0 175 - 55 to + 125 - 55 to + 100 10 C C sec. Unit mW mW mW mW mW mW mW mW mW mW/C mW/C mW/C mW/C mW/C mW/C mW/C mW/C mW/C VRMS mm mm Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input GaAs emitter (per channel) Parameter Forward voltage Reverse current Capacitance Test condition IF = 20 mA VR = 3.0 V VR = 0 V Symbol VF IR CO Min Typ. 1.25 0.1 25 Max 1.5 10 Unit V A pF Document Number 83621 Rev. 1.5, 26-Oct-04 www.vishay.com 3 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Output per channel Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Collector-emitter capacitance Test condition IC = 100 A VCE = 10 V, IF = 0 VCE = 10 V, f = 1.0 MHz Symbol BVCEO ICEO CCE Min 30/55 1.0 3.4 100 Typ. Max Unit V nA pF Coupler Parameter Collector-emitter saturation voltage Isolation test voltage Isolation resistance Capacitance (input-output) RIO CIO Test condition IC = 50 mA, IF = 50 mA Symbol VCEsat 5300 10 12 Min Typ. 0.9 Max 1.0 Unit V VRMS pF 0.5 Current Transfer Ratio Parameter Current Transfer Ratio Test condition IF = 10 mA, VCE = 5.0 V Part IL30 IL55 ILD30 ILD55 ILQ30 ILQ55 IL31 ILD31 ILQ31 Symbol CTR CTR CTR CTR CTR CTR CTR CTR CTR Min 100 100 100 100 100 100 200 200 200 Typ. 400 400 400 400 400 400 400 400 400 Max Unit % % % % % % % % % www.vishay.com 4 Document Number 83621 Rev. 1.5, 26-Oct-04 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Switching Characteristics Parameter Rise time Fall time Test condition VCC = 13.5 V, IF = 50 mA, RL = 100 VCC = 13.5 V, IF = 50 mA, RL = 100 Symbol tr tf Min Typ. 10 35 Max Unit s s Typical Characteristics (Tamb = 25 C unless otherwise specified) 1.4 VF - Forward Voltage - V 10 Ta = -55C NIce - Normalized Ice Normalized to: IF = 10 mA Vce = 5 V Vce = 5 V 1. 3 1.2 1.1 1.0 0.9 0.8 0.7 .1 1 Ta = 25C Vce = 1V .1 Ta = 85C .01 1 10 IF - Forward Current - mA 100 iil30_03 .001 .1 10 1 IF - LED Current - mA 100 iil30_01 Figure 1. Forward Voltage vs. Forward Current Figure 3. Normalized Non-Saturated and Saturated CollectorEmitter Current vs. LED Current 1.2 NCTRce - Normalized CTRce Normalized to: NIcb - Normalized Icb 10 Normalized to: Vcb = 3.5 V 1 IF = 10 mA 1.0 0.8 0.6 0.4 0.2 Vce = 5 V IF = 10 mA Vce = 5 V .1 .01 Vce =1V 0.0 .1 1 10 100 1000 .001 .1 iil30_04 IF - LED Current - mA iil30_02 1 10 IF - LED Current - mA 100 Figure 2. Normalized Non-Saturated and Saturated CTRCE vs. LED Current Figure 4. Normalized Collector-Base Photocurrent vs. LED Current Document Number 83621 Rev. 1.5, 26-Oct-04 www.vishay.com 5 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors 12000 Hfe - Current Gain VCE=5 V 10000 8000 6000 4000 2000 0 .01 .1 1 Base Current 10 100 tPHL tS VO VCE=1 V tD tR tPLH VTH=1.5 V tF IF iil30_05 iil30_08 Figure 5. HFE Current Gain vs. Base Current Figure 8. Switching Waveform 80 tpLH - Low/High Propagation Delay - S Vcc = 5V Vth = 1.5 V 60 1.0 k V CC =13.5 V 220 i 470 F=10 KHz, DF=50% RL VO 40 20 100 0 0 5 10 15 20 iil30_09 IF =50 mA iil30_06 IF - LED Current - mA Figure 6. Low to High Propagation Delay vs. Collector Load Resistance and LED Current Figure 9. Switching Schematic 20 tpHL - High/Low Propagation delay - s 1k 15 Vcc = 5 V Vth = 1.5 V 10 100 5 0 0 5 10 15 20 IF - LED Current - mA iil30_07 Figure 7. High to low Propagation Delay vs. Collector Load Resistance and LED Current www.vishay.com 6 Document Number 83621 Rev. 1.5, 26-Oct-04 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) Package Dimensions in Inches (mm) pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8 ISO Method A 3 2 1 .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) i178006 .300 (7.62) typ. 10 .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3-9 .008 (.20) .012 (.30) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) Document Number 83621 Rev. 1.5, 26-Oct-04 www.vishay.com 7 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 10 11 12 13 14 15 16 ISO Method A .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) .031(.79) .130 (3.30) .150 (3.81) 4 .018 (.46) .022 (.56) i178007 .300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) .020(.51) .035 (.89) .100 (2.54)typ. .050 (1.27) 10 typ. 3-9 .008 (.20) .012 (.30) Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18494 www.vishay.com 8 Document Number 83621 Rev. 1.5, 26-Oct-04 IL30/ 31/ 55/ ILD30/ 31/ 55/ ILQ30/ 31/ 55 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83621 Rev. 1.5, 26-Oct-04 www.vishay.com 9 |
Price & Availability of ILD55-X007
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |